rev.3.00 mar 22, 2005 page 1 of 4 HSS83 silicon epitaxial planar diode for high voltage switching rej03g0570-0300 (previous: ade-208-177b) rev.3.00 mar 22, 2005 features ? high reverse voltage. (v r = 250 v) ? suitable for 5 mm pitch high speed automatically insertion. ? small glass package (mhd) enables easy mounting and high reliability. ordering information type no. cathode band package name package code (previous code) HSS83 black mhd grzz0002zc-a (mhd) pin arrangement 1 2 cathode band 1. cathode 2. anode
HSS83 rev.3.00 mar 22, 2005 page 2 of 4 absolute maximum ratings (ta = 25 c) item symbol value unit peak reverse voltage v rm * 1 300 v reverse voltage v r 250 v average rectified current i o 150 ma peak forward current i fm 625 ma non-repetitive peak forward surge current i fsm * 2 1 a power dissipation pd 400 mw junction temperature tj 200 c storage temperature tstg ? 65 to +175 c notes : 1. reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. within 1s forward surge current. electrical characteristics (ta = 25 c) item symbol min typ max unit test condition i r1 ? ? 200 na v r = 250 v reverse current i r2 ? ? 100 a v r = 300 v forward voltage v f ? ? 1.0 v i f = 100 ma capacitance c ? 1.5 ? pf v r = 0 v, f = 1 mhz reverse recovery time t rr ? ? 100 ns i f = i r = 30 ma, irr = 3 ma, r l = 100 ?
HSS83 rev.3.00 mar 22, 2005 page 3 of 4 main characteristic 1.0 10 10 1.0 0.1 100 f = 1mhz 050 200 150 250 100 300 ta = 25 c ta = 75 c ta = 50 c ta = -25 c ta = 25 c ta = 125 c ta = 75 c 0 0.2 0.8 0.6 1.0 0.4 1.2 10 -1 10 -2 10 -3 10 -4 fig.1 forward current vs. forward voltage forward voltage v f (v) forward current i f (a) 10 -5 10 -6 10 -7 10 -8 10 -9 reverse current i r (a) fig.2 reverse current vs. reverse voltage reverse voltage v r (v) fig.3 capacitance vs. reverse voltage reverse voltage v r (v) capacitance c (pf)
HSS83 rev.3.00 mar 22, 2005 page 4 of 4 package dimensions l e l min nom max b -0.4 d -2.0 e --2.4 l 26.0 - - - - b d dimension in millimeters reference symbol ? 0.084g mass[typ.] mhd / mhdv grzz0002zc-a renesas code jeita package code previous code
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 200 5. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon 2.0
|
